Application

Compared with the aluminum nitride transition heat sink with a thermal conductivity of 230W/(K m), the diamond heat sink has a high thermal conductivity (up to 1800W/(K m), which can be used as a transition heat sink for high-power semiconductor

Diamond has a very high thermal conductivity, so the heat generated by the LED lamp is quickly transferred to the diamond, keeping the LED at a low normal operating temperature.

The thermal conductivity of diamond is about 5 times higher than that of copper and about 2 orders of magnitude higher than that of sapphire and they are widely used in solid state laser.

The ability of diamond substrate to absorb laser energy is low, the ultra-high thermal conductivity can conduct heat away, the window temperature is low, the thermal stress is small, the "thermal lens" effect is low, and

The temperature levels and gradients when using diamond are both 22°C lower than when using aluminum alloy material, showing a significant advantage of diamond.

The high thermal conductivity material diamond is applied to the high-power SiC hybrid module packaging structure to reduce the maximum temperature of the chip, thereby improving the service life and reliability of the hybrid module.

The diamond microchannel heat sink in the radar assembly uses a diamond film material with a thermal conductivity of up to 2KW/(m-K) and increases the heat transfer area by designing a highly efficient microchannel structure.

The choice of IGBT module substrates is based on their electrical insulating properties at high voltages, thermal properties (high temperature resistance and good thermal conductivity) and mechanical properties (matching the expansion coefficients of

Compared to existing GaN on SiC HEMTs, the GaN-on-Diamond structure can provide lower junction temperatures and significantly increase the power handling capability of the device, which is expected to increase by more than 3 times. Such an impro

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