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CSMH successfully has acheived high-quality AlN (AlN) thin films on silicon substrates, XRD (0002) rocking curve < 0.8°, and surface roughness Ra < 1.5 nm on the growth surface, high-quality AlN films help GaN for large size, high quality and low cost.
High-quality AlN On Sapphire (sapphire-based AlN) produced by CSMH shows XRD (0002) rocking curve<0.05° and surface roughness Ra<1.2nm of growth surface. CSMH has performed extensive the quality controls and improved the product quality. Our quality controls ensure product stability while reducing product costs and shortening production cycle. Customer verification shows that CSMH's high-quality AlN On Sapphire can significantly improve the yield, stability, and performance of UVC LED products.
CSMH firstly innovated the technology of diamond-based AlN with XRD (0002) rocking curve<3°, ultra-high thermal conductivity of diamond (thermal conductivity at room temperature can reach 2000W/m.K), Ra <2nm, contributing to a brand new application of AlN.
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