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Good heat dissipation can be achieved by reducing the bulk thermal resistance and interface thermal resistance in electronic components. Since the junction temperature of a transistor is limited by its ability to dissipate heat within the chip, high thermal conductivity materials need to be placed near the hot spot of the chip to minimize the device temperature rise.

Compared to existing GaN-on-SiC HEMTs, the GaN on Diamond structure provides a lower junction temperature and significantly increases the power handling capability of the device, which is expected to be more than 3 times higher. Such an improvement reduces the overall cooling requirements of the system and also improves device reliability.

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