Application

Position：

Home Application5G Base Stations

5G Base Station
Compared to existing GaN on SiC HEMTs, the GaN-on-Diamond structure can provide lower junction temperatures and significantly increase the power handling capability of the device, which is expected to increase by more than 3 times. Such an impro

Leave A Message

If you are interested in our products and want to know more details,please leave a message here and we will Reply you as soon as we can.

闽ICP备2021005558号-1

Send an Inquiry

Leave A Message

5G Base StationCompared to existing GaN on SiC HEMTs, the GaN-on-Diamond structure can provide lower junction temperatures and significantly increase the power handling capability of the device, which is expected to increase by more than 3 times. Such an impro