CSMH Diamond Wafer has excellent properties such as wide bandgap, high thermal conductivity, high breakdown field, high mobility value, high temperature resistance, acid and alkali resistance, corrosion resistance, radiation resistance, etc. It plays an important role in the applications of high-power, high-frequency, and high temperature electronic devices and is regarded as one of the most promising wide-bandgap semiconductor materials at present.
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High Thermal Conductivity
1000-2000W/m.K
Original Precision Machining
Surface Roughness Ra＜1nm
For Wafer-level Applications
Ideal for Bonding Processes
Customized Size
2 inch,10*10mm……
Diamond Wafer
✔ Thermal conductivity up to 1000-2000W/m.k.
✔ Diamond wafer growth surface roughness (Ra)<1nm
✔ High quality and controllable cost
✔ Customized
Diamond is a broadband semiconductor material with excellent performance and many advantages.
1.Ultra-high Thermal Conductivity: 2200W/m.K. Diamond has the highest thermal conductivity at room temperature
2.Ultra-high Dielectric Breakdown Characteristics: Breakdown field of 107V/cm, 50 times that of GaAs, twice that of GaN and 2.5 times that of SiC
3.Ultra-high Power Capacity: Allowable power usage capacity is more than 2500 times that of Si; It's ideal for making high-power electronic devices
4.Low Dielectric Constant: 5.7, about 1/2 that of GaAs and less than half that of InP
5.High Electron Mobility：Electron Mobility speed is 12.7 times faster than GaAs, Si or InP, maintaining high rate even when electric field strength increases
6.High Mobility Value: Electron Mobility for 4500c㎡/(V·s), Higher than most materials, suitable for making high frequency electronic devices
Diamond Wafer
Thickness（μm)：Customized according to your demand
Density（g/cm3)：3.3216
Thermal Conductivity（W/(m*K))：TC.1200; T.C1500; T.C1800
Thermal Diffusivity（cm^2/s）：6.6；8.2；9.9
Thermal Expansion Coefficient（RT-700℃) (10-6K-1)：3.1962
Moh's Hardness：＞10
Tensile Strength (Mpa)：450~1100
Young's Modulus (GPa)：1000~1100
Dielectric Constant (1MHz)：5.68
Dielectric Loss (1MHz): 6.2*10-8
Volume Resistance (25℃，'Ω·cm)：2.95*1013
Insulation Withstand Voltage（V/mA)：DC 5.5KV/1.5mA
Transmittance：40%~65%
Infrared Absorption Coefficient (cm-1@1.064um)：0.3979~0.1871
Fine Throw - Surface Roughness (Front)：Ra＜1nm
Surface Roughness (Back)：Ra＜200nm
TTV：＜1um (Ø25mm)
Bow：＜1um (Ø25mm)
Flatness PV (fringe@633nm)：1.5fringe（Ø25mm)
| No. | Items | Unit | Definitions |
| 1.Crystal parameters | |||
| 1.1 | Morphology | -- | Circular Substrates/Custom Topography Substrates |
| 1.2 | Element | -- | Diamond |
| 1.3 | Thickness | μm | Special requirements can be customized according to demand |
| 1.4 | Density | g/cm3 | 3.3216 |
| 2.Thermal properties | |||
| 2.1 | Thermal conductivity（T.C） | W/(m*K) | TC.1200; T.C1500; T.C1800 |
| 2.2 | Thermal diffusivity（300K (cm2 s-1)） | cm^2/s | 6.6；8.2；9.9 |
| 2.3 | Thermal expansion coefficient（RT-700℃） | 10-6K-1 | 3.1962 |
| 3.Mechanical behavior | |||
| 3.1 | Moh's hardness | - | ＞10 |
| 3.2 | Tensile strength | Mpa | 450~1100 |
| 3.3 | Young's modulus | GPa | 1000~1100 |
| 4.Electrical properties | |||
| 4.1 | Dielectric constant | 1MHz | 5.68 |
| 42 | Dielectric loss | 1MHz | 6.2*10-8 |
| 4.3 | Volume resistance | 25℃，'Ω·cm | 2.95*1013 |
| 4.4 | Insulation withstand voltage | V/mA | DC 5.5KV/1.5mA |
| 5.Optical properties | |||
| 5.1 | Transmittance | % | 40%~65% |
| 5.2 | Infrared absorption coefficient | cm-1@1.064um | 0.3979~0.1871 |
| 6.Processing parameters | |||
| 6.1 | Fine Throw - Surface Roughness (Front) | nm | Ra＜1nm |
| Coarse Throw - Surface Finish (Front) | nm | Ra＜200nm | |
| 6.2 | Surface roughness (back) | nm | Ra＜200nm |
| 6.3 | TTV | μm | ＜1um（Ø25mm） |
| 6.4 | Bow | μm | ＜1um（Ø25mm） |
| 65 | Flatness PV | fringe@633nm | ＜1.5 fringe（Ø25mm） |
| 7.Metalization | |||
| 7.1 | Metallization | Gold plating; Copper covering | |
| 7.2 | Solder | AuSn | |
| 7.3 | Perforate | ||
| Metallization and patterning can be customized according to customer needs. | |||
| 8.Package | |||
| 8.1 | Package | -- | Vacuum packaging |
| 8.2 | Package | -- | Multi-piece packaging |
| 9.Remark | |||
| The processing parameters come from the data of standard products, other specifications can be based on customer requirements | |||
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