Single Crystal Diamond Wafer

With excellent physical and chemical properties, diamond has broad development prospects in ultra-precision machining, semiconductor, aerospace, nuclear energy and other high-tech fields, and has even become an irreplaceable raw material in many fields. Single crystal diamond has the best thermal conductivity among all materials (up to 2200W/m.k), as well as high stiffness, considerable wear resistance and extremely high hardness, as well as chemical inertia, radiation resistance and excellent electrochemical performance.

1. Heteroepitaxy

CSMH focuses on the research and development of diamond power semiconductor materials, and successfully achieves high-quality iridium single crystal thin film growth on sapphire substrates through heteroepitaxy. The use of high-quality iridium single crystal thin films will effectively improve the growth quality of single crystal diamond, which is of great significance for the preparation of high-quality large-sized single crystal diamond semiconductor materials.

2. Homoepitaxy

Adopting MPCVD method for homogeneous epitaxial growth of single crystal diamond, promoting the application research of single crystal diamond in thermal, optical, and electrical fields, providing high-quality thermal, optical, and electronic grade single crystals for scientific research institutions/enterprises. At present, single crystal diamond has achieved large-scale production.

Product Advantages:

1. High heat conductivity;

2, low thermal expansion coefficient;

3, low friction coefficient;

4, high hardness;

5. High transparency in visible and infrared light;

6, high refraction coefficient;

7. Chemical and radioactive inertness.