Boron-doped diamond is a new type of p-type semiconductor materiawith the advantages of stability, breakdown field strength and hole mobili.ty. lt has broad application prospects, especially suitable for power semi.conductor devices and electrochemical applications.
The boron doped single crystal diamond produced by CSMH can be dopedfrom low to high concentration. The low concentration boron dopeddiamond has good mobility and is suitable to be used as the main materialfor semiconductor devices, while the high concentration boron doped diamond has low resistivity and is suitable to be used as the electrode forohmic contacts.
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High stability
High breakdown field strength
High hole mobility
Boron-doped diamond is a new type of p-type semiconductor materiawith the advantages of stability, breakdown field strength and hole mobili.ty. lt has broad application prospects, especially suitable for power semi.conductor devices and electrochemical applications.The boron doped single crystal diamond produced by CSMH can be dopedfrom low to high concentration. The low concentration boron-doped diamond has good mobility and is suitable to be used as the main materialfor semiconductor devices, while the high concentration boron doped dia-mond has low resistivity and is suitable to be used as the electrode forohmic contacts.
Above are standard specifications, customization is available
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