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GaN & Diamond

CMSH uses MPCVD equipment to achieve epitaxial growth of polycrystalline diamond material with a thickness of<10um on a 50.8 mm (2 inch) silicon-based gallium nitride HEMT. Scanning electron microscope and X-ray diffractometer were used to characterize the surface morphology, crystalline quality and grain orientation of the diamond film. The results showed that the surface morphology of the sample was relatively uniform, and the diamond grains basically showed (111) plane growth, with Higher crystal plane orientation. In the growth process, the etching of gallium nitride (GaN) by hydrogen plasma is effectively avoided, so that the characteristics of gallium nitride before and after diamond coating do not change significantly.