The great interest in diamond wafers is fundamentally linked to the extreme properties of diamond of course, which far exceed those of silicon and other semiconductor materials. The utility of materials for semiconductor applications is generally measured in figures of merit – and those come out factors superior for diamond.Diamond has a “power semiconductor figure of merit” that exceeds silicon’s by 10,000 times, so diamond based semiconductors have the potential for unprecedented power density, speed, and performance.
In addition to being the ultimate heat-flux substrate, diamond heat sink as a semiconductor outperforms silicon by a factor of 23,000 times, GaN by a factor of 120, and SiC by a factor of 40 thanks to its unique material properties. As a result, diamond can rule high-power-density applications.
Diamond form can directly be used as a semiconductor, replacing GaN and SiC semiconductors entirely.
Both lateral high-mobility Field-Effect Transistors on semi-insulating diamond (SCD) substrates and vertical Schottky Barrier Diode devices on doped SCD substrates are being pursued forpower electronics applications devices also used for GaN and SiC semiconductors.
Where diamond semiconductor is uniquely positioned to corner the high-voltage, high-current power electronics market, similarly, diamond is uniquely positioned to replace vacuum tubes still common today in high-power wireless communication like broadcasing stations, communication satellites, and radar. None of the other semiconductors, like GaN, SiC, Si, GaAs, or InP are similarly suitable for high-power wireless communication.
Diamond heat sink at industry standard sizes of 2” or 3” inch are the enabling component for this opportunity.We are working with partners around the world to advance communications, make energy more efficient and powerful.
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