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Home KnowledgeTechnologyHigh Thermal Conductivity Diamond Heat Sink Chips Empower Advanced Semiconductor Packaging

High Thermal Conductivity Diamond Heat Sink Chips Empower Advanced Semiconductor Packaging

Date:2026-03-24Hits:10

Driven by the trend of smaller packaging and higher integration in high-end semiconductors, industries are facing challenges including extreme heat concentration, shorter heat dissipation paths, and greater heat dissipation difficulties. Traditional thermal management materials suffer from limited thermal conductivity and inferior physical and chemical properties. In contrast, diamond heat sink chips feature ultra-high thermal conductivity, matched thermal expansion coefficient, excellent electrical insulation, and high hardness, offering a new solution for semiconductor packaging and heat dissipation.

Direct Application of Diamond as Packaging Substrate

In Gallium Nitride (GaN) radio frequency, high-power microwave, Silicon Carbide (SiC) power module and other fields, GaN, SiC or silicon chips are directly flip-chip bonded or eutectic bonded onto diamond heat sink chips. Through high-precision polishing of diamond wafers and advanced bonding technologies, stable mechanical and thermal connections are formed between chips and diamond substrates. This application significantly reduces thermal resistance, lowers chip junction temperature, and boosts power density by over 3 times.

For instance, in laser diode packaging, the light-emitting area of the laser diode is closely attached to the diamond heat sink chip. Thanks to diamond’s ultra-high in-plane thermal conductivity, it rapidly homogenizes and dissipates heat from hotspots, effectively suppressing the "thermal lens effect" and markedly improving the brightness and service life of lasers.

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Diamond Wafer Bonding

During chip manufacturing, diamond layers are directly integrated into silicon wafers via microchannel technology or epitaxial growth. Leveraging wafer bonding technology, diamond wafers are directly bonded to silicon wafers to achieve gapless connections between chips and diamond. Subsequently, diamond layers are epitaxially grown on wide-bandgap semiconductor chips to form composite structures. This method further eliminates micro thermal resistance and enhances integration.

About Huahe Jidian (Xiamen) Semiconductor Technology Co., Ltd.

As a national high-tech enterprise specializing in the R&D, production and sales of wide-bandgap semiconductor materials, Huahe Jidian (Xiamen) Semiconductor Technology Co., Ltd. is committed to providing customers at home and abroad with high-quality diamond heat sink chip materials and application solutions, strongly supporting the development of third-generation semiconductor packaging.


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