Recently, there is an increasing demand for high-frequency high-power electronic devices that can operate at high frequencies, which offer higher bandwidth potential, to accommodate the rapid increase of the network capacity of communication networks. Specifically, a portable telephone needs only about 1 W at 1.5 GHz, but communication satellites and television broadcasing stations require 1 kW at 10 GHz, and Beyond-5G communication base stations require 100 W at 100 GHz. In the 10-GHz frequency region, vacuum tubes are still being used for electric power generation and amplification. However, they require a high operating voltage and has a high-power consumption, resulting to a low energy efficiency yield and high energy loss. In contrast, from the environmental viewpoint, these vacuum tubes should be replaced by semiconductors.
Moreover, two important wide bandgap semiconductors suitable for power applications that silicon include silicon carbide (SiC), and gallium nitride (GaN). However, in theory, diamond semiconductor devices exhibit superior physical properties, including high thermal conductivity, high breakdown field strength, and high carrier mobility, which allow significant reduction of the losses, rapid heat dissipation, and increase in device longevity. Moreover, it can operate 50 000 times higher output-power and energy-efficiency and 1200 times higher frequency than silicon devices, owing to its excellent properties. Therefore, diamond is expected to be the ultimate semiconductor, which is the most suitable for high-frequency high-power electronic devices.
However, high quality and large size wafer of diamonds are needed for industrial applications on electronic semiconductor devices. Thus far, the commercial size of diamond plates applied in diamond semiconductor devices is 4 mm in general and degrades faster. Therefore, despite the excellent properties and characteristics of a diamond semiconductor, it is considered to be almost impossible for industrial applications.
CSMH, a widebandgap Semiconductor Material and Device company manufacturing with unique technology to develop a novel diamond semiconductor whose output power is the highest ever reported for semiconductor devices. The diamond semiconductor devices are deemed to replace vacuum tubes, which are conventionally used in the very-high-frequency and very-high-power applications, leading to increased output power in Beyond-5G wireless base stations, communication satellites, television broadcasing stations, and radar.
Products including: high quality diamond wafer, diamond heat sink, GaN & Diamond wafer and AlN on various substrate like Si, Sapphire and Diamond etc.
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