Application of Diamond Wafers in IGBT Thermal Management

IGBT plays a core role in the field of high-power conversion and control, and statistics show that a large portion of self ignition in new energy vehicles is caused by thermal runaway of the battery. With the increase of power density, the IGBT power module of electric vehicles needs to carry greater current, which has higher requirements for conductivity and thermal conductivity. Effective heat dissipation has become a key challenge to ensure the stable operation of IGBTs.

Diamond, as one of the materials with the highest thermal conductivity in nature, can reach a thermal conductivity of 2000W/(m.K) and has extremely strong performance in practical applications. As a heat dissipation material for IGBT, it will greatly improve its stability and reliability:

1. Extremely high thermal conductivity coefficient: Diamond thermal conductivity can exceed 2000W/(m.K), while copper thermal conductivity is usually between 380-400 W/(m · K), which means that diamond can dissipate heat faster. 

2. Reduction of thermal interface resistance: The use of diamond thermal interface materials can reduce thermal interface resistance by more than 90%, significantly improving thermal efficiency.

3. Temperature reduction: In actual testing, the IGBT system using diamond heat sink reduces the surface temperature of the chip by about 20-30 ° C compared to the system using copper or aluminum substrates at the same power output, which helps to improve the reliability and lifespan of the device.

4. Power density improvement: Due to the efficient heat dissipation of diamond, researchers have found that IGBT modules using diamond heat dissipation can withstand higher power density without affecting their performance.

5. Size effect: In a study on electric vehicle inverters, IGBT modules using diamond heat sinks have reduced their volume and weight by about 30% compared to traditional designs, while maintaining the same heat dissipation performance.

These data indicate that diamond can significantly improve the heat dissipation performance of IGBT in practical applications, thereby enhancing the stability and efficiency of the entire system.

CSMH focuses on the research and production of diamond, with core products including polycrystalline diamond (diamond heat sink, diamond wafer, diamond window, diamond heterojunction integrated composite substrate); Single crystal diamond (thermal grade, optical grade, electronic grade); AlN film, etc. The thermal conductivity of diamond heat sinks reaches 1000-2000W/(m.k), and the diamond wafer Ra<1nm. The related technical indicators have reached the world's leading level. Currently, they are applied in new energy vehicle IGBTs, lasers, radars, aerospace, and medical devices.