GaN-on-Diamond Technology in Aerospace

With worldwide data demand outpacing the frequency, bandwidth, and power capabilities of our current communications infrastructure, CSMH is committed to revolutionizing the future of fast, affordable satellite communications with gallium nitride (GaN)-on-Diamond technology.

Through the application of GaN-on-Diamond materials, CSMH’s technologies can resolve issues critical to the expansive growth of data use and consumption, enabling smaller, lighter and higher performing satellites that lead to lower launch costs, reduced cost-per-bit, more launch cycles, and increased communications access and throughput.

In GaN-on-Diamond, the hottest part of a transistor is brought to within tens of nanometers of the synthetic diamond – the most thermally conductive material known to the industrial world. The result is a dramatic reduction in the effect of heat on the power amplifier, and therefore the satellite system. The RF power amplifier is typically responsible for the bulk of the power used and the heat generated in most communication systems. The cooler state of operation gives RF and satellite system designers a previously unattainable thermal envelope to improve energy efficiency and shrink the system’s size, weight, and operating costs.

CSMH has made breakthroughs in all three combination schemes of GaN & Diamond. Existing diamond heat sinks for GaN on Diamond, Diamond on GaN, and GaN&Diamond bonding, benchmarking against world-class standards. The technical indicators of the existing diamond heat sinks and diamond wafer products of CSMH have reached the world's leading level. The surface roughness of the diamond wafer growth surface Ra<1nm and the thermal conductivity of the diamond heat sinks reaches 1000-2000W/m.K. We will promote the development and progress of science and technology through continuous product development and technological innovation.