The third-generation semiconductors, in addition to the two main forces of silicon carbide and gallium nitride, diamond is one of the important materials of the third-generation semiconductors. It is widely used in 5G communications, radar early warning, new energy vehicles, high-power lasers, GaN Hemt, etc.
General properties of diamond :
•Unsurpassed hardness
•Extremely high thermal conductivity (>2000W/ m.k , five times that of copper )
•Broad band optical transparency
•Extremely chemically inert : Not affected by any acid or other chemicals
•Graphitization only at very high temperatures ( T >700℃ in an oxygen containing and 1500℃ in an inert atmosphere )
Leveraging synthetic diamond’s unparalleled thermal properties allows semiconductor design engineers to address today’s critical challenges, such as improved reliability and increased power density on a smaller footprint, thereby delivering world-leading competitive advantage to both device and system manufacturers alike.
Combining low weight, electrical insulation, mechanical strength, low toxicity and low dielectric constant with a room - temperature thermal conductivity up to 5 times higher than copper makes CVD diamond the optimal heat spreader for device and package designers. CVD diamond enables dramatic increases in lifetime and power, with reduced operating costs for the latest semiconductor GaN devices
Compound Semiconductor Manufacturing (Xiamen) Co., Ltd is an advanced semiconductor manufacturing technology based joint venture company invested from the Korea, China and Singapore, registered in the city of Xiamen, China. We have equipped with advanced semiconductor manufacturing tools including MPCVD, MOCVD, LPCVD, HVPE and high temperature PVD to produce high quality Diamond wafer and AIN template on various substrate including Si. sapphire, and polished diamond.
After scientific tests, the technical indicators of diamond wafer have been internationally leading.
Currently, we are providing the thermal grade polycrystalline diamond, which can be used as an effective heat sink aims to solve the heat issue in temperature sensitive device, such as power devices, lasers and avalanche photodiodes etc. We also provides wafer scale polished diamond with sub - nanometer RMS surface roughness, which might be suitable for the integration of GaN, GaO and AIN epilayers and devices on Diamond via direct bonding or heteoepitaxy.
After more than ten years of technical accumulation and precipitation, the CSMH team provides professional diamond heat sink thermal management solutions
•Thermal conductivity tailored to suit both performance and cost requirements
•Custom sizes and shapes for your specific solution
•Optical transparency when needed
•Means to quantify bonding efficacy and stack performance
Typical applications:
•High-power RF devices :Base station RF amplifiers 、Satellite RF uplink amplifiers、Microwave amplifiers
•High-power optoelectronics:Laser diodes and laser diode array、High-brightness LEDs
•High voltage power devices:Automotive sub systems 、Aerospace sub systems
•Power electronics: Smart grid, High-speed rail transit, New energy vehicles, Consumer electronics
CSMH has the ability to design MPCVD equipment, and has created a high-efficiency and precision machining method for diamond atomic-level surface based on plasma-assisted polishing. Diamond wafer Ra<1nm, diamond heat sink thermal conductivity 1000-2000W/m.k, more GaN on diamond, Diamond on GaN, diamond-based aluminum nitride and other products.Our mission is to be the most advanced compound semiconductor company in the global market, contributing to the related technology development. We have strong R & D team and actively collaborate with best research group around the world.
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