Aluminum nitride AIN film is the core material of 5G radio

AlN is one of the third/fourth generation semiconductor materials. Its thin films have excellent physical properties such as high resistivity, high thermal conductivity, high stability and high acoustic transmission rate, especially under high temperature, high pressure and high frequency conditions. It is one of the most concerned new semiconductor materials today.

AlN wafer is high power, high frequency electronics and ultraviolet detectors, ultraviolet laser and deep uv LED optoelectronic devices, such as the best substrate materials, in the defense, aerospace, secure communications/wireless communication, chip manufacturing, environmental protection, biological, medical, and other areas of the cutting-edge technology has wide application prospect, is also our key strategy is the key breakthrough of new materials.

Because AlN materials can maintain piezoelectric properties at 1200℃, AlN piezoelectric thin film devices can adapt to high temperature operating environment, and good chemical stability enables it to adapt to corrosive operating environment. In addition, AlN thin film materials can be preferentially grown on sapphire, silicon carbide, silicon and other substrates and various metal substrate electrode materials, which are widely used in photoelectric devices, electronic components, MEMS and other fields.

Among the known filter piezoelectric materials, AlN films can transmit sound waves at speeds up to 12,000 m/s (compared with less than 4,000 m/s for conventional substrates). AlN film is the best piezoelectric material for 5G high frequency SAW/BAW filters and MEMS sensors due to its excellent chemical and thermal stability, high sensitivity to external environment such as pressure, temperature, stress and gas, and compatibility with conventional silicon CMOS technology. In particular, AlN film doped with scandium can greatly improve its piezoelectric coefficient, so as to improve the electromechanical coupling coefficient of SAW/BAW. It is a new generation of 5G RF SAW/BAW filter core piezoelectric/substrate material.

Due to the high technical barrier of AlN growth equipment and growth process and its application value in military, aerospace and other fields, AlN wafer substrates of various sizes in Europe and the United States are all prohibited to China, and the growth of domestic AlN thin film has ushered in unprecedented great opportunities and challenges.