With the development of carbon materials and their outstanding thermal conductivity, research on carbon materials as thermal conductive fillers is increasing, and has become a new hot topic in academic and industrial research.
Carbon materials are one of the most abundant materials in nature, with various allotropes. Layered graphite can be formed through sp2 hybridization, and graphene can be peeled off from the graphite material; The network structure of sp2 hybridized arrangement can be curled into a ring shape to form carbon nanotubes; And sp3 hybridization can form diamond. Carbon materials are a relatively stable material that is resistant to chemical corrosion. In anaerobic environments, their high temperature resistance can reach over 3000 ℃. At the same time, their thermal conductivity is very strong, making them very promising thermal conductive fillers.
Due to the strong C-C bond in diamond, it has high hardness, extremely high melting point, and an ultra-high thermal conductivity of 2200W/m.k; Because all valence electrons are confined to the covalent bond region and there are no free electrons, diamond is non-conductive and is known as the "ultimate semiconductor material" in the industry
Advantages of Diamond Wafer:
Extremely high thermal conductivity: thermal conductivity of 2200W/m.K, diamond has the highest thermal conductivity at room temperature;
Extremely high dielectric breakdown characteristics: the breakdown electric field is 107V/cm, which is 50 times that of GaAs, 2 times that of GaN, and 2.5 times that of SiC
Extremely high power capacity: The allowable power usage capacity is more than 2500 times that of Si material; Especially suitable for producing high-power electronic devices;
Low dielectric constant: The dielectric constant is 5.7, which is about half of GaAs and less than half of InP
High saturation carrier velocity: The saturation carrier velocity is 12.7 times that of GaAs, Si, or InP, and it also maintains a high rate as the electric field strength increases;
High carrier mobility: The electron mobility is 4500c ㎡/(V · s), which is higher than most materials and suitable for making high-frequency electronic devices;
CSMH is committed to the production and research of diamond materials, with core products including diamond wafers, diamond heat sinks, diamond optical windows, diamond heterojunction integrated composite substrates, etc. Among them, the surface roughness of diamond wafer growth surface Ra<1nm, and the thermal conductivity of diamond heat sinks reach 1000-2000W/m.k. Currently, it is applied in high-power lasers, aerospace, new energy vehicles, medical devices, radar, new energy photovoltaics, and other fields.
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