Boron-doped single-crystal diamond alleviates power demands of AI data centers

The rapid development of digital technologies such as artificial intelligence (AI) and large language models has significantly increased the computing demand for data centers. This growth not only puts pressure on infrastructure but also exacerbates the impact on the environment due to high energy consumption.

Conventional diamond semiconductors face significant challenges in energy consumption and thermal management, factors that can lead to premature failure. However, diamond's exceptional thermal and electrical properties make it a unique material for addressing these challenges. However, fully exploiting these properties requires innovative modifications to semiconductors to enhance their structure and performance.

A proprietary approach to semiconductor doping in diamond, achieving substituent integration of both n-type (negatively charged) and p-type (positively charged) dopants, involves complex defect engineering that alters the electronic structure of diamond. This process minimizes structural distortion and improves electrical conductivity, which is crucial for supporting high-temperature power electronics and high-performance quantum computing in data centers.

This novel doping method optimizes the electronic properties of diamond, thereby increasing the semiconductor's carrier mobility and reducing defect density. These improvements can help develop more reliable power semiconductor devices and efficient quantum gates, which are critical to driving advanced computing infrastructure.

The advanced doping technique developed directly addresses the formation of vacancy defects, optimizing diamond's electronic structure and enabling superior charge transport. Consequently, diamond exhibits significant improvements in performance and thermal management compared to other advanced materials such as boron nitride or gallium nitride.

With these innovative technologies, diamond semiconductors minimize energy losses during power conversion, support higher temperatures, and increase voltage handling capabilities. These advanced chips are compact and highly efficient, making them ideally suited to meet the stringent requirements of modern technology applications, from powering AI-driven data centers to enabling next-generation automotive systems. By employing these cutting-edge technologies, diamond semiconductors are poised to redefine the field of power electronics and set new standards for the semiconductor industry.

The boron-doped single-crystal diamond produced by CSMH can achieve doping from low concentration to high concentration. It has realized a uniform and controllable concentration and a customizable boron doping process.CSMH uses the MPCVD method to prepare large-sized and high-quality diamonds,and currently has mature products such as diamond heat sinks, diamond wafers, diamond windows,diamond hetero junction integrated composite substrates,etc.