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Home KnowledgeTechnology The expert in high-power device heat dissipation,diamond wafer

The expert in high-power device heat dissipation,diamond wafer

Date:2024-04-28Hits:32

According to statistics, power device failures caused by heat concentration account for 55% of the total failure rate, and product heat dissipation design has a crucial impact on product reliability. Semiconductor devices have small size and long lifespan, and can also be applied in radar, sound measurement, and medical fields in addition to communication. However, research has found that heat dissipation affects the lifespan and usage of semiconductor devices. In addition, high CPU temperature can cause the computer to automatically shut down, blue screen, crash, and lag, and long-term high temperature can affect its service life. Whether it is high-power devices or power electronic components, thermal management is particularly important.

 

Diamond has a wide bandgap, high thermal conductivity, high breakdown field strength, high carrier mobility, high temperature resistance, acid and alkali resistance, corrosion resistance, and radiation resistance. Its superior performance makes it play an important role in high-power, high-frequency, and high-temperature fields. Its classic application scenarios include diamond thermal management materials.

 

The advantages of diamond are as follows:

Extremely high thermal conductivity: Thermal conductivity of 2200W/m.K, diamond has the highest thermal conductivity at room temperature.

Extremely high dielectric breakdown characteristics: the breakdown electric field is 107V/cm, which is 50 times that of GaAs, 2 times that of GaN, and 2.5 times that of SiC.

Extremely high power capacity: The allowable power usage capacity is more than 2500 times that of Si material; Especially suitable for producing high-power electronic devices.

Low dielectric constant: The dielectric constant is 5.7, which is about half of GaAs and less than half of InP.

High saturation carrier velocity: The saturation carrier velocity is 12.7 times that of GaAs, Si, or InP, and it also maintains a high rate as the electric field strength increases.

High carrier mobility: The electron mobility is 4500c ㎡/(V · s), which is higher than most materials and suitable for making high-frequency electronic devices.

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Comparison of characteristics between diamond and other heat dissipation materials

CSMH uses the most advanced MPCVD device to prepare large-area high-quality diamond wafers, and uses specialized grinding and polishing equipment to achieve a surface roughness Ra<1 nm on the CVD diamond growth surface. The existing core products include diamond wafers, diamond heat sinks, diamond window chips, and diamond heterojunction integrated composite substrates. The thermal conductivity of diamond heat sink is 1000-2000W/m.k. At present, it is applied in high-power lasers, aerospace, new energy vehicles, photovoltaics, radar, medical devices and other fields.

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