Diamond, which has been discovered by mankind for more than 2,000 years, is known as the "king of gems", but its value is much more than that. It has wide band gap, high thermal conductivity, high breakdown field strength, high carrier mobility, high temperature resistance, acid and alkali resistance, corrosion resistance, radiation resistance, and its superior performance makes it suitable for high power, high frequency, high temperature It can be said that diamond is one of the most promising semiconductor materials at present.
Diamond is an excellent wide-bandgap semiconductor material with many advantages:
(1) Very high thermal conductivity: thermal conductivity 2200W/m.K, diamond has the highest thermal conductivity at room temperature.
(2) Extremely high dielectric breakdown characteristics: the breakdown electric field is 107V/cm, which is 50 times that of GaAs, 2 times that of GaN, and 2.5 times that of SiC. The breakdown voltage of diamond is 514 times higher than that of silicon, while 6H-SiC, 4H-SiC and GaN are 56, 46 and 34 times higher than silicon, respectively. The operating temperature of the device is greater than 500 ℃, and the device that works in high power, high temperature and harsh environment has broad application prospects.
(3) Extremely high power capacity: the allowable power usage capacity is more than 2500 times that of Si materials; it is especially suitable for making high-power electronic devices.
(4) Low dielectric constant: The dielectric constant of diamond is 5.7, which is about 1/2 of GaAs and less than half of InP. That is to say, at a given frequency, diamond semiconductor has a competitive Capacitive load, which provides great convenience for the design of millimeter-wave devices.
(5) High saturation carrier velocity: The saturation carrier velocity of diamond is 12.7 times that of GaAs, Si or InP, and the carrier velocity is greater than the peak value of GaAs, that is, it can be maintained even when the electric field strength increases its high rate.
(6) High carrier mobility: both electron mobility and hole mobility are better than other semiconductor materials, diamond electron mobility is 4500cm2/(V s), while Si is 1600cm2/(V s) , GaAs is 800cm2/(V s), GaN is 600cm2/(V s); diamond hole mobility is 3800cm2/(V s), while Si is 600cm2/(V s), GaAs is 300cm2 /(V·s), GaN is less than 50cm2/(V·s), therefore, diamond can make high-frequency electronic devices.
(7) Very high quality factor: Generally, the quality factor is determined by the saturated carrier velocity and dielectric strength. If the quality factor of Si is 1 as the benchmark, then the quality factor of GaAs is 7, the quality factor of InP is 16, the quality factor of SiC is 1138, and the quality factor of diamond is 8206. When its quality factor is used to judge the potential of a logic circuit, the dielectric constant, saturation carrier velocity and thermal conductivity are the criteria. For example, the criterion of Si is 1, then GaAs is 0.456, SiC is 5.8, and diamond is 32.2 , therefore, in theory, diamond is most suitable for integrated circuit use.
(8) Excellent optical properties: Diamond not only has excellent electrical properties, but also has excellent optical properties. Diamond is transparent in the entire spectral band (ultraviolet, visible light, infrared), and has an unusually high refractive index, except for its intrinsic absorption in certain wavelength bands of ultraviolet and infrared. Therefore, diamond is the most ideal optical window material.
(9) Extremely high hardness and high chemical stability: diamond not only has a dense structure, wear resistance, low friction factor and extremely high hardness, but also is absolutely stable and chemically resistant in most environments.
CSMH focuses on the production and R&D of diamond. Its core products are diamond heat sinks with thermal conductivity of 1000-2000W/m.k, diamond wafer Ra<1nm, and GaN on diamond, Diamond on GaN, diamond-based aluminum nitride and other products , to provide you with the most complete diamond thermal management solution. High-power semiconductor lasers using diamond heat sinks have been used in optical communications, and are also used in laser diodes, power transistors, and electronic packaging materials. Based on diamond wafer product capabilities, the company has developed GaN-on-diamond epitaxial wafers, which are mainly used in radio frequency (satellite, 5G base station) and high-power devices (photovoltaic, wind power, new energy vehicles, energy storage) and other Areas with high thermal management needs, as a complement to GaN-on-SiC materials.
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