New Products| Boron-Doped Single Crystal Diamond - New Solutions for P-Type Semiconductor Materials

Boron doped diamond is a new type of p-type semiconductor material, which can also be used in the field of electrochemistry, and has the advantages of high stability, high breakdown field, and high hole mobility. In response to the market demand, HIDC has launched boron doped single crystal diamond, which can meet the needs of customers for the preparation of high temperature and high power semiconductor components and other applications.

The boron doped single crystal diamond produced by CSMH can be doped from low concentration to high concentration. The low concentration boron doped diamond has good mobility and is suitable to be used as the main material for semiconductor devices, while the high concentration boron doped diamond has low resistivity and is suitable to be used as the electrode for ohmic contacts.