Functional requirements
★ (1) The microwave source generates high-frequency microwave and enters the reaction cavity through waveguide to stimulate high-purity hydrogen to produce plasma, and the carbon element in methane gas is deposited onto the diamond wafer of the growth stage to complete the semiconductor single crystal diamond epitaxy by controlling the temperature and pressure in the cavity.
★ (2) The waveguide system is metal waveguide (including pins regulator, waveguide, etc.), the reaction chamber is double water-cooled stainless steel reaction chamber, and the substrate stage is elevated water-cooled substrate stage.
★(3) Equipped with rotary vacuum oil-free pump, turbo molecular pump, and high vacuum gauge, which can display the vacuum degree of the reaction chamber.
★ (4) with high-precision flow meter and flow control valve, each gas has the ability to blow bypass, through the blowing to realize the pipeline self-cleaning, to ensure the purity of the subsequent gas ability.
★ (5) with infrared temperature measurement system, can display the abutment, sample temperature.
(6) The standard substrate tray is molybdenum disk, which can realize one time growth and many times continuous growth of diamond samples, and can observe the reaction chamber samples from four directions.
★ (7) with a water chiller, can use the cooling water system on the system's reaction chamber, abutment, microwave power supply and other components of the cooling to ensure that the equipment works properly.
★ (8) with system software, with LCD touch screen, PLC automatic control system, can be deposited on the process of program control, with an insurance device, alarm unit and emergency shutdown function, with remote fault alarm function.
Requirements for technical specifications
No. | Name | Specific technical requirements | |
1 | Microwave system | Microwave frequency | 2450±25 MHz |
★Output power | ≥ 6 kW (0.6-6 kW adjustable) | ||
★Output stability | < 1% | ||
★Microwave leakage | ≤2 mW/cm2 (Surface 5 cm) | ||
2 | Reaction chamber | ★Vacuum leakage | ≤ 4 Pa/h |
Watch window | ≥4 | ||
3 | Vacuum system | Operating pressure | 1-33 kPa |
★Automatic pressure control accuracy | ± 15 Pa | ||
Oil-free pump speed | ≥ 20 m³/h | ||
molecular pump speed | ≥ 400 L/s | ||
★Vacuum system leakage | ≤ 1.0×10-9 Pa·m3/s | ||
Pressure rise/12 h | ≤ 30 Pa | ||
Background limit vacuum | ≤ 0.5 Pa (With molecular pump limit vacuum ≤1×10-5 Pa) | ||
★High vacuum meter display accuracy | ± 0.01 Pa | ||
4 | Sample table | ★Basch height adjustment | ±0.1 mm |
substrate holder size | ≥ 2" | ||
Effective deposition diameter | ≥ Ф50 mm | ||
5 | Water cooling system | ★Cooling water flow | >20 L/min |
★Chiller liquid temperature control range | 5-30 ℃ | ||
Control accuracy of the cooling water | ± 1.0 ℃ (The error between the actual temperature and the set temperature is <± 1.0℃) | ||
6 | Gas system | MFC control accuracy | ± 2% |
★MFC Gas route | ≥6 lines | ||
★Flow range | (1) H2: 1000 sccm (2) CH4: 100 sccm (3) N2: 10 sccm (4) O2: 10 sccm (5) B2H6: 10 sccm (6) Standby: 10 sccm | ||
7 | Temperature measurement system | ★Measurement range | 250-1400 ℃ |
Temperature control accuracy | ± 2 ℃ | ||
8 | procedure control system | Unattended hours | ≥10 h |
No. | Name | Specific technical requirements | |
1 | Microwave system | Microwave frequency | 2450±25 MHz |
★Output power | ≥ 10 kW (1-10 kW adjustable) | ||
★Output stability | < 1% | ||
★Microwave leakage | ≤2 mW/cm2 (Surface 5 cm) | ||
2 | Reaction chamber | ★Vacuum leakage | ≤ 4 Pa/h |
Watch window | ≥4 | ||
3 | Vacuum system | Operating pressure | 1-33 kPa |
★Automatic pressure control accuracy | ± 15 Pa | ||
Oil-free pump speed | ≥ 20 m³/h | ||
molecular pump speed | ≥ 400 L/s | ||
★Vacuum system leakage | ≤ 1.0×10-9 Pa·m3/s | ||
Pressure rise/12 h | ≤ 30 Pa | ||
Background limit vacuum | ≤ 1 Pa (With molecular pump limit vacuum ≤1×10-5 Pa) | ||
★High vacuum meter display accuracy | ± 0.01 Pa | ||
4 | Sample table | ★Basch height adjustment | ±0.1 mm |
substrate holder size | ≥ 3" | ||
Effective deposition diameter | ≥ Ф75 mm | ||
5 | Water cooling system | ★Cooling water flow | >40 L/min |
★Chiller liquid temperature control range | 5-30 ℃ | ||
Control accuracy of the cooling water | ± 1.0 ℃ (The error between the actual temperature and the set temperature is <± 1.0℃) | ||
6 | Gas system | MFC control accuracy | ± 2% |
★MFC Gas route | ≥6 lines | ||
★Flow range | (1) H2: 1000 sccm (2) CH4: 100 sccm (3) N2: 10 sccm (4) O2: 10 sccm (5) B2H6: 10 sccm (6) Standby: 10 sccm | ||
7 | Temperature measurement system | ★Measurement range | 250-1400 ℃ |
Temperature control accuracy | ± 2 ℃ | ||
8 | procedure control system | Unattended hours | ≥10 h |
No. | Name | Specific technical requirements | |
1 | Microwave system | Microwave frequency | 915±15 MHz |
★Output power | ≥ 25 kW (2-25 kW adjustable) | ||
★Output stability | < 0.25% | ||
★Microwave leakage | ≤2 mW/cm2 (Surface 5 cm) | ||
2 | Reaction chamber | ★Vacuum leakage | ≤ 6 Pa/h |
Watch window | ≥4 | ||
3 | Vacuum system | Operating pressure | 1-33 kPa |
★Automatic pressure control accuracy | ± 15 Pa | ||
Oil-free pump speed | ≥ 20 m³/h | ||
molecular pump speed | ≥ 400 L/s | ||
★Vacuum system leakage | ≤ 1.0×10-9 Pa·m3/s | ||
Pressure rise/12 h | ≤50 Pa | ||
Background limit vacuum | ≤ 1 Pa (With molecular pump limit vacuum ≤5×10-5 Pa) | ||
★High vacuum meter display accuracy | ± 0.01 Pa | ||
4 | Sample table | ★Basch height adjustment | ±0.1 mm |
substrate holder size | ≥ 5" | ||
Effective deposition diameter | ≥ Ф125 mm | ||
5 | Water cooling system | ★Cooling water flow | >80 L/min |
★Chiller liquid temperature control range | 5-30 ℃ | ||
Control accuracy of the cooling water | ± 1.0 ℃ (The error between the actual temperature and the set temperature is <± 1.0℃) | ||
6 | Gas system | MFC control accuracy | ± 2% |
★MFC Gas route | ≥6 lines | ||
★Flow range | (1) H2: 2000 sccm (2) CH4: 200 sccm (3) N2: 20 sccm (4) O2:20 sccm (5) B2H6: 20 sccm (6) Standby: 20 sccm | ||
7 | Temperature measurement system | ★Measurement range | 250-1400 ℃ |
Temperature control accuracy | ± 2 ℃ | ||
8 | procedure control system | Unattended hours | ≥10 h |
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